PART |
Description |
Maker |
ST2301SRG ST2301A |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
ST2302MSRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
STN4416 |
STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STN4850 |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STN1810 |
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
ST2304SRG |
ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FG |
1200V NPT Trench IGBT NPT Trench Technology, Positive temperature coefficient Extremely enhanced avalanche capability
|
Fairchild Semiconductor List of Unclassifed Manufacturers
|
FGA25N120ANTD |
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology 1200V NPT Trench IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
TSM2301CXRF |
Advance trench process technology
|
TY Semiconductor Co., Ltd
|
SSF1116 |
Advanced trench process technology
|
Silikron Semiconductor Co.,LTD. Silikron Semiconductor Co.,...
|